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PD - 95394A
Features
DIGITAL AUDIO MOSFET
IRLR4343PbF
IRLU4343PbF
IRLU4343-701PbF
l
Advanced Process Technology
l
Key Parameters Optimized for Class-D Audio
Key Parameters
Amplifier Applications
l Low R DSON for Improved Efficiency
l Low Q g and Q sw for Better THD and Improved
Efficiency
l Low Q rr for Better THD and Lower EMI
l 175°C Operating Junction Temperature for
Ruggedness
V DS
R DS(ON) typ. @ V GS = 10V
R DS(ON) typ. @ V GS = 4.5V
Q g typ.
T J max
55
42
57
28
175
V
m
m
nC
°C
l Repetitive Avalanche Capability for Robustness and
Reliability
l Multiple Package Options
l Lead-Free
D
G
D-Pak
IRLR4343
I-Pak
IRLU4343
I-Pak Leadform 701
S
IRLU4343-701
Refer to page 10 for package outline
Description
This Digital Audio HEXFET ? is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Absolute Maximum Ratings
Parameter
Max.
Units
V DS
V GS
I D @ T C = 25°C
I D @ T C = 100°C
I DM
P D @T C = 25°C
P D @T C = 100°C
T J
T STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Clamping Pressure
55
±20
26
19
80
79
39
0.53
-40 to + 175
–––
V
A
W
W/°C
°C
N
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
Junction-to-Case
–––
1.9
R θ JA
R θ JA
Junction-to-Ambient (PCB Mounted)
Junction-to-Ambient (free air)
–––
–––
50
110
°C/W
Notes ? through ? are on page 10
www.irf.com
1
12/8/04
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